ST150S
10000
1000
100
T = 25°C
J
T = 125°C
J
0.5
1
1.5
2
2.5
3
3.5
4
Inst antaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
0.1
St eady St ate Value
= 0.105 K/ W
R
thJC
(DC Operation)
0.01
0.001
0.001
0.01
0.1
1
10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
100
10
1
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
Re ctangular gate pulse
a) Re commended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Re commended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Inst antaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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