ST150S
2). Forward Conduction
Parameters
ST150S
Unit
Conditions
Max. average forward current
@ Case temperature
150
85
A
℃
A
°
180 conduction, half sine wave
IT(AV)
℃
DC @ 78 case temperature
IT(RMS) Max. RMS forward current
360
5700
5970
4800
5000
163
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
Max. peak, one-cycle forward,
ITSM
A
non-repetitive surge current
Sinusoidal half wave,
Initial TJ = TJ max.
148
I2t
Maximum I2t for fusing
KA2s
115
105
2
2
2
√
√
√
s t = 0.1 to 10ms, no voltage reapplied
I
t
Maximum I t for fusing
1630
0.92
0.98
0.88
0.81
1.55
600
KA
π
π
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
(16.7% x
x IF(AV) < I <
x IF(AV)), TJ = TJ max.
π
x IF(AV)), TJ = TJ max.
V
π
(I >
x IF(AV)), TJ = TJ max.
π
rt1
rt2
Low level value of forward slope resistance
High level value of forward slope resistance
(16.7% x
x IF(AV) < I <
x IF(AV)), TJ = TJ max.
Ipk= 560A, TJ = TJ max, tp = 10ms sine pulse
Ω
m
π
(I >
VTM Max. forward voltage drop
V
IH
IL
Maximum holding current
Typical latching current
Max. non-repetitive rate of rise
of turned-on current
℃
TJ = 25 , anode supply 12V resistive load
mA
1000 (300)
Ω
μ
s
Gate drive 20V, 20 , tr ≤ 1
μ
s
di/dt
td
1000
1.0
A/
TJ = TJ max, anode voltage ≤ 80% VDRM
μ
Gate current 1A, dig/dt = 1A/
s
Typical delay time
Typical turn-off time
℃
℃
Vd = 0.67% V , T = 25 VDRM, TJ =25
μ
s
μ
TM = 175A, TJ = TJ max, di/dt = 20A/ s, VR = 50V
I
tq
100
500
30
μ
Ω
μ
s
dv/dt = 20V/ s, Gate 0V 100 , tp = 500
Maximum critical rate of rise of
off-state voltage
μ
s
dv/dt
V/
TJ = TJ max. linear to 80% rated VDRM
IDRM Max. peak reverse and off-state
IRRM leakage current
mA
TJ = TJ max. rated VDRM/VRRM applied
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