ST150S
2). Forward Conduction
Parameters
I
T(AV)
Max. average forward current
@ Case temperature
ST150S
150
85
360
5700
I
TSM
Max. peak, one-cycle forward,
non-repetitive surge current
5970
4800
5000
163
It
2
Unit
A
℃
A
Conditions
180
°
conduction, half sine wave
DC @ 78
℃
case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
T(RMS)
Max. RMS forward current
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
Maximum I t for fusing
2
148
115
105
KA s
2
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
1630
0.92
0.98
0.88
0.81
1.55
600
1000 (300)
1000
KA
2
√
s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 560A, T
J
= T
J
max, t
p
= 10ms sine pulse
T
J
= 25
℃
, anode supply 12V resistive load
Gate drive 20V, 20
Ω
, tr ≤ 1
μ
s
T
J
= T
J
max, anode voltage ≤ 80% V
DRM
Gate current 1A, di
g
/d
t
= 1A/
μ
s
μ
s
V
d
= 0.67% V , T = 25
℃
V
DRM
, T
J
=25
℃
I
TM
= 175A, T
J
= T
J
max, di/dt = 20A/
μ
s, V
R
= 50V
dv/dt = 20V/
μ
s, Gate 0V 100
Ω
, t
p
= 500
μ
s
V/
μ
s
T
J
= T
J
max. linear to 80% rated V
DRM
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
di/dt
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Maximum holding current
Typical latching current
Max. non-repetitive rate of rise
of turned-on current
Typical delay time
m
Ω
V
mA
A/
μ
s
t
d
1.0
t
q
Typical turn-off time
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
100
dv/dt
I
DRM
I
RRM
500
30
mA
T
J
= T
J
max. rated V
DRM
/V
RRM
applied
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