LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
OutputIP2vsRFFrequencyforHigh
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =10dBm
OutputIP2vsRFFrequencyforLow
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =0dBm
OutputIP2vsRFFrequencyforLow
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =10dBm
90
80
70
60
50
40
30
90
80
70
60
50
40
30
90
80
70
60
50
40
30
f
f
= f + f
IM2 RF BB2
f
f
= f – f
IM2 RF BB2
f
f
= f – f
LO RF BB1
= f + f
IM2 RF BB2
LO RF BB1
LO RF BB1
= f – f
= f + f
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
0
2
3
4
5
6
0
2
3
4
5
6
0
2
3
4
5
6
1
1
1
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G78
55881 G79
55881 G80
GNDRFtoGNDThermistorDC
ResistancevsTemperature
(IGNDRF(DC) =100μA)
GNDRFtoGNDThermistorDC
ResistancevsTemperature
(IGNDRF(DC) =200μA)
3.0
2.5
3.0
V
> V
V
> V
GNDRF GND
GNDRF
GND
2.5
2.0
1.5
2.0
1.5
1.0
0.5
0
1.0
0.5
0
V
CC
V
CC
V
CC
V
CC
= 3.45V
= 3.3V
= 3.15V
= 0V
V
CC
V
CC
V
CC
V
CC
= 3.45V
= 3.3V
= 3.15V
= 0V
–40
0
40
80
120
–40
0
40
80
120
TEMPERATURE (°C)
TEMPERATURE (°C)
55881 G81
55881 G82
55881fb
15
Linear [ Linear ]
