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LTC3859 参数 Datasheet PDF下载

LTC3859图片预览
型号: LTC3859
PDF下载: 下载PDF文件 查看货源
内容描述: 多相同步升压控制器 [PolyPhase Synchronous Boost Controller]
分类和应用: 控制器
文件页数/大小: 36 页 / 358 K
品牌: Linear Systems [ Linear Systems ]
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LTC3787  
OPERATION  
multiple LTC3787s can be configured for 2-, 3-, 4- , 6- and  
12-phase operation.  
Power Good  
The PGOOD pin is connected to an open drain of an  
internal N-channel MOSFET. The MOSFET turns on and  
pulls the PGOOD pin low when the VFB pin voltage is not  
within 10% of the 1.2V reference voltage. The PGOOD  
pin is also pulled low when the corresponding RUN pin  
is low (shut down). When the VFB pin voltage is within  
the 10% requirement, the MOSFET is turned off and the  
pin is allowed to be pulled up by an external resistor to a  
source of up to 6V (abs max).  
Table ±.  
V
CONTROLLER 2 PHASE (°C)  
CLKOUT PHASE (°C)  
PHASMD  
GND  
180  
180  
240  
60  
90  
Floating  
INTV  
120  
CC  
CLKOUT is disabled when the controller is in shutdown  
or in sleep mode.  
Operation When V > Regulated V  
IN  
OUT  
Operation at Low SENSE Pin Common Mode Voltage  
WhenV risesabovetheregulatedV voltage,theboost  
IN  
OUT  
ThecurrentcomparatorintheLTC3787ispowereddirectly  
controller can behave differently depending on the mode,  
+
from the SENSE pin. This enables the common mode  
inductor current and V voltage. In forced continuous  
+
IN  
voltage of the SENSE and SENSE pins to operate at as  
lowas2.5V, whichisbelowtheUVLOthreshold. Thefigure  
on the first page shows a typical application in which the  
mode, the loop works to keep the top MOSFET on con-  
tinuously once V rises above V . The internal charge  
IN  
OUT  
pump delivers current to the boost capacitor to maintain  
a sufficiently high TG voltage. The amount of current the  
charge pump can deliver is characterized by two curves  
in the Typical Performance Characteristics section.  
controller’s VBIAS is powered from V  
while the V  
OUT  
IN  
+
supply can go as low as 2.5V. If the voltage on SENSE  
drops below 2.5V, the SS pin will be held low. When the  
SENSE voltage returns to the normal operating range, the  
SS pin will be released, initiating a new soft-start cycle.  
In pulse-skipping mode, if V is between 100% and  
IN  
110% of the regulated V  
voltage, TG turns on if the  
OUT  
BOOST Supply Refresh and Internal Charge Pump  
inductor current rises above a certain threshold and turns  
off if the inductor current falls below this threshold. This  
threshold current is set to approximately 6%, 4% or  
3% of the maximum ILIM current when the ILIM pin is  
Each top MOSFET driver is biased from the floating  
bootstrap capacitor, C , which normally recharges during  
B
each cycle through an external diode when the bottom  
MOSFET turns on. There are two considerations for keep-  
ing the BOOST supply at the required bias level. During  
start-up, if the bottom MOSFET is not turned on within  
100μs after UVLO goes low, the bottom MOSFET will be  
forced to turn on for ~400ns. This forced refresh gener-  
ates enough BOOST-SW voltage to allow the top MOSFET  
ready to be fully enhanced instead of waiting for the initial  
few cycles to charge up. There is also an internal charge  
pump that keeps the required bias on BOOST. The charge  
pump always operates in both forced continuous mode  
and pulse-skipping mode. In Burst Mode operation, the  
charge pump is turned off during sleep and enabled when  
the chip wakes up. The internal charge pump can normally  
supply a charging current of 55μA.  
grounded, floating or tied to INTV , respectively. If the  
CC  
controller is programmed to Burst Mode operation under  
this same V window, then TG remains off regardless of  
IN  
the inductor current.  
If V rises above 110% of the regulated V  
voltage in  
IN  
OUT  
any mode, the controller turns on TG regardless of the  
inductor current. In Burst Mode operation, however, the  
internal charge pump turns off if the chip is asleep. With  
the charge pump off, there would be nothing to prevent  
the boost capacitor from discharging, resulting in an  
insufficient TG voltage needed to keep the top MOSFET  
completely on. To prevent excessive power dissipation  
across the body diode of the top MOSFET in this situation,  
the chip can be switched over to forced continuous mode  
to enable the charge pump or a Schottky diode can also  
be placed in parallel to the top MOSFET.  
3787fc  
14  
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