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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
- 7K, -7J, -8, -10K  
Parameter  
Symbol  
Unit Test conditions Notes  
Min  
Max  
Input leakage current  
Output leakage current  
Output high voltage  
Output low voltage  
ILI  
ILO  
-1  
1
uA 0<=Vin <=VCC  
0<=Vout <=VCC  
uA  
-1.5  
2.4  
-
1.5  
-
DQ = disable  
VOH  
VOL  
V
V
IOH = -2 mA  
IOL =2 mA  
0.4  
Notes : 1. ICC depends on output load condition when the device is selected. ICC (max) is specified at the  
output open condition.  
2. One bank operation.  
3. Addresses are changed once per one cycle.  
4. Addresses are changed once per two cycles.  
5. After Power down mode, CLK operating current.  
6. After Power down mode, no CLK operating current.  
7. After self refresh mode set, self refresh current.  
8. L-Version.  
9. Input signals are VIH or VIL fixed.  
Capacitance (Ta = 25C, VCC, VCCQ = 3.3 V +/- 0.3 V)  
Parameter  
Symbol  
CI1  
Min.  
2.5  
Max.  
4
Unit  
pF  
Notes  
1, 3, 4  
Input capacitance (CLK)  
Input capacitance (Signals)  
Output capacitance (DQ)  
CI2  
2.5  
5
pF  
1, 3, 4  
CO  
4.0  
6.5  
pF  
1, 2, 3, 4  
1. Capacitance measured with Boonton Meter or effective capacitance measuring method.  
2. DQM, DQMU/DQML = VIH to disable Dout.  
Notes :  
3. This parameter is sampled and not 100% tested.  
4. Measured with 1.4 V bias and 200mV swing at the pin under measurement.  
39  
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