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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
AC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ = 0 V)  
(Continued)  
- 7K  
- 7J  
- 8  
- 10K  
Parameter  
Symbol  
Unit Notes  
Min Max Min Max Min Max Min Max  
Write recovery or data-in  
to precharge lead time  
Active (a) to Active (b)  
command period  
10  
20  
-
-
10  
20  
-
-
10  
16  
-
-
15  
20  
-
-
ns  
ns  
1
1
t
RWL  
t
RRD  
Transition time  
(rise to fall)  
1
-
5
1
-
5
1
-
5
1
-
5
ns  
t
T
Refresh period  
Notes :  
64  
64  
64  
64  
ms  
t
REF  
1. AC measurement assumes tT = 1ns. Reference level for timing of input signals is 1.40V.  
2. Access time is measured at 1.40V. Load condition is CL = 50pF without termination.  
3. tLZ (min)defines the time at which the outputs achieves the low impedance state.  
4. tHZ (max)defines the time at which the outputs achieves the high impedance state.  
5. tCES define CKE setup time to CKE rising edge except Power down exit command.  
Test Condition  
- Input and output-timing reference levels: 1.4V  
- Input waveform and output load: See following figures  
I/O  
OPEN  
80%  
20%  
2.4V  
0.4V  
input  
CL  
tT  
tT  
41  
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