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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Burst Length  
CLK  
tRCD  
Active  
Read  
Command  
Address  
Column  
Row  
out 0  
BL = 1  
BL = 2  
BL = 4  
out 0 out 1  
out 0 out 1 out 2 out 3  
Dout  
out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7  
BL = 8  
out 0-1  
out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7 out 8  
out 0 out 1  
BL = Full Page  
BL = Burst Length  
CAS Latency = 2  
Write Operation  
2. Single write:  
Burst write or single write mode is selected by  
the OPCODE(A13, A12,A11, A10, A9, A8) of  
the mode register.  
A single write operation is enabled by setting  
OPCODE (A9, A8) to (1, 0). In a single write  
operation, data is only written to the column  
address (AY0 to AY8; GM72V66841CT/CLT) and  
the bank select address (A12/A13) specified by  
the write command set cycle without regard to  
the burst length setting. (The latency of data  
input is 0.)  
1. Burst write:  
A burst write operation is enabled by setting  
OPCODE(A9, A8) to (0, 0). A burst write starts  
in the same cycle as a write command set. (The  
latency of data input is 0.) The burst length can  
be set to 1, 2, 4, 8 and full page, like burst read  
operations. The write start address is specified  
by the column address (AY0 to AY8;  
GM72V66841CT/CLT) and the bank select address  
(A12/A13) at the write command set cycle.  
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