Specifications ispLSI and pLSI 1032
Switching Test Conditions
Figure 2. Test Load
Input Pulse Levels
GND to 3.0V
≤ 3ns 10% to 90%
1.5V
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
+ 5V
1.5V
R
1
See figure 2
Device
Output
Test
Point
3-state levels are measured 0.5V from steady-state
active level.
Table 2- 0003
R
2
C
L
*
Output Load Conditions (see figure 2)
*
C includes Test Fixture and Probe Capacitance.
L
Test Condition
R1
R2
CL
A
470Ω
390Ω
390Ω
390Ω
390Ω
35pF
35pF
35pF
5pF
B
Active High
Active Low
∞
470Ω
Active High to Z
at VOH - 0.5V
∞
C
Active Low to Z
470Ω
390Ω
5pF
at VOL + 0.5V
DC Electrical Characteristics
Over Recommended Operating Conditions
3
SYMBOL
PARAMETER
CONDITION
MIN. TYP.
MAX.
UNITS
V
Output Low Voltage
Output High Voltage
–
2.4
–
–
–
0.4
–
IOL =8 mA
V
V
OL
V
IOH =-4 mA
OH
µA
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
isp Input Low Leakage Current
I/O Active Pull-Up Current
–
-10
10
0V ≤ VIN ≤ VIL (MAX.)
3.5V ≤ VIN ≤ VCC
I
I
I
I
I
IL
µA
–
–
IH
µA
–
–
-150
-150
-200
190
220
0V ≤ VIN ≤ VIL (MAX.)
0V ≤ VIN ≤ VIL
IL-isp
IL-PU
µA
–
–
mA
mA
mA
1
Output Short Circuit Current
–
–
VCC = 5V, VOUT = 0.5V
VIL = 0.5V, VIH = 3.0V Commercial
OS
2,4
Operating Power Supply Current
–
130
135
I
CC
–
fTOGGLE = 1 MHz
Industrial/Military
1. One output at a time for a maximum duration of one second.
2. Measured using eight 16-bit counters.
3. Typical values are at VCC = 5V and TA = 25oC.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption sec-
Table 2- 0007A-32-isp
tion of this datasheet and Thermal Management section of this Data Book to estimate maximum ICC
.
4
1996 ISP Encyclopedia
LATTICE [ LATTICE SEMICONDUCTOR ]
