IS63LV1024
IS63LV1024L
TRUTH TABLE
Mode
WE
CE
OE
I/OOperation
VDD Current
Not Selected
(Power-down)
X
H
X
High-Z
ISB1, ISB2
OutputDisabled
Read
H
H
L
L
L
L
H
L
High-Z
DOUT
DIN
ICC1,ICC2
ICC1,ICC2
ICC1,ICC2
Write
X
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TSTG
Parameter
Value
–0.5 to VDD + 0.5
–65 to +150
1.0
Unit
V
°C
W
Terminal Voltage with Respect to GND
StorageTemperature
PowerDissipation
PT
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
AmbientTemperature
0°C to +70°C
VDD
3.3V 0.3V
3.3V 0.15V
–40°Cto+85°C
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
TestConditions
Min.
2.4
Max.
—
Unit
V
VOH
VOL
VIH
VIL
ILI
OutputHIGHVoltage
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
OutputLOWVoltage
Input HIGH Voltage
Input LOW Voltage(1)
InputLeakage
—
0.4
V
2.2
VDD + 0.3
0.8
V
–0.3
V
GND ≤ VIN ≤ VDD
Com.
Ind.
–1
–5
1
5
µA
ILO
OutputLeakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Com.
Ind.
–1
–5
1
5
µA
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. I
1/26/07
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
