IS63LV1024
IS63LV1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
JANUARY2007
DESCRIPTION
FEATURES
TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,
low power, 131,072-word by 8-bit CMOS static RAM in
revolutionarypinout.TheIS63LV1024/IS63LV1024Lisfab-
ricatedusingISSI'shigh-performanceCMOStechnology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
powerconsumptiondevices.
• High-speed access times:
8, 10, 12 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
• CE power-down
• Fully static operation: no clock or refresh
required
TheIS63LV1024/IS63LV1024Loperatesfromasingle3.3V
power supply and all inputs are TTL-compatible.
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
• Lead-free Available
FUNCTIONAL BLOCK DIAGRAM
128K X 8
MEMORY ARRAY
A0-A16
DECODER
VDD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
I/O0-I/O7
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. I
1/26/07
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
