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IS63LV1024L-10JLI 参数 Datasheet PDF下载

IS63LV1024L-10JLI图片预览
型号: IS63LV1024L-10JLI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM 3.3V革命引脚 [128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 18 页 / 615 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS63LV1024  
IS63LV1024L  
AC WAVEFORMS  
WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)  
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
LOW  
CE  
t
AW  
t
PWE1  
WE  
t
SA  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
D
OUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR2.eps  
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)  
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
LOW  
LOW  
CE  
t
t
AW  
t
PWE2  
WE  
t
SA  
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
D
OUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR3.eps  
Notes:  
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,  
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling  
edge of the signal that terminates the Write.  
2. I/O will assume the High-Z state if OE > VIH.  
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. I  
1/26/07