欢迎访问ic37.com |
会员登录 免费注册
发布采购

IS61LV10248-10TI 参数 Datasheet PDF下载

IS61LV10248-10TI图片预览
型号: IS61LV10248-10TI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×8高速CMOS静态RAM [1M x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 116 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS61LV10248-10TI的Datasheet PDF文件第3页浏览型号IS61LV10248-10TI的Datasheet PDF文件第4页浏览型号IS61LV10248-10TI的Datasheet PDF文件第5页浏览型号IS61LV10248-10TI的Datasheet PDF文件第6页浏览型号IS61LV10248-10TI的Datasheet PDF文件第8页浏览型号IS61LV10248-10TI的Datasheet PDF文件第9页浏览型号IS61LV10248-10TI的Datasheet PDF文件第10页浏览型号IS61LV10248-10TI的Datasheet PDF文件第11页  
®
IS61LV10248  
ISSI  
AC WAVEFORMS  
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
t
OHA  
DATA VALID  
DOUT  
PREVIOUS DATA VALID  
READ1.eps  
READ CYCLE NO. 2(1,3) (CE and OE Controlled)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
OE  
CE  
t
HZOE  
t
DOE  
t
t
LZOE  
ACE  
t
HZCE  
t
LZCE  
HIGH-Z  
D
OUT  
DATA VALID  
CE_RD2.eps  
Notes:  
1. WE is HIGH for a Read Cycle.  
2. The device is continuously selected. OE, CE = VIL.  
3. Address is valid prior to or coincident with CE LOW transitions.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
7
Rev. C  
04/13/06