®
IS61LV10248
ISSI
TRUTH TABLE
Mode
WE CE OE I/OOperation VDD Current
Not Selected
(Power-down)
X
H
X
High-Z
ISB1, ISB2
OutputDisabled H
L
L
L
H
L
High-Z
DOUT
DIN
ICC
ICC
ICC
Read
Write
H
L
X
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
V
V
°C
W
VTERM
VDD
Terminal Voltage with Respect to GND
VDD Relates to GND
–0.5 to VDD + 0.5
–0.3 to 4.0
–65 to +150
1.0
TSTG
PT
StorageTemperature
PowerDissipation
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
AmbientTemperature
VDD
Commercial
Industrial
0°C to +70°C
3.3V +10%, -5%
3.3V +10%, -5%
–40°C to +85°C
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Conditions
Max.
Unit
pF
InputCapacitance
VIN = 0V
6
8
CI/O
Input/OutputCapacitance
VOUT = 0V
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. C
04/13/06
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
