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IS61LV10248-10TI 参数 Datasheet PDF下载

IS61LV10248-10TI图片预览
型号: IS61LV10248-10TI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×8高速CMOS静态RAM [1M x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 116 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS61LV10248  
ISSI  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-8  
-10  
Symbol  
Parameter  
Min. Max.  
Min. Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
RC  
AA  
OHA  
ACE  
DOE  
ReadCycleTime  
AddressAccessTime  
OutputHoldTime  
CEAccessTime  
OEAccessTime  
OEtoHigh-ZOutput  
OEtoLow-ZOutput  
CEtoHigh-ZOutput  
CEtoLow-ZOutput  
PowerUpTime  
8
3
8
10  
3
10  
10  
4
t
t
8
t
0
0
t
3.5  
3
(2)  
tHZOE  
4
(2)  
(2  
t
LZOE  
3
4
tHZCE  
3
0
(2)  
tLZCE  
8
3
10  
tPU  
0
0
tPD  
PowerDownTime  
Notes:  
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse  
levels of 0V to 3.0V and output loading specified in Figure 1.  
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage.  
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
04/13/06