欢迎访问ic37.com |
会员登录 免费注册
发布采购

IS61LV10248-10TI 参数 Datasheet PDF下载

IS61LV10248-10TI图片预览
型号: IS61LV10248-10TI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×8高速CMOS静态RAM [1M x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 116 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS61LV10248-10TI的Datasheet PDF文件第1页浏览型号IS61LV10248-10TI的Datasheet PDF文件第2页浏览型号IS61LV10248-10TI的Datasheet PDF文件第3页浏览型号IS61LV10248-10TI的Datasheet PDF文件第5页浏览型号IS61LV10248-10TI的Datasheet PDF文件第6页浏览型号IS61LV10248-10TI的Datasheet PDF文件第7页浏览型号IS61LV10248-10TI的Datasheet PDF文件第8页浏览型号IS61LV10248-10TI的Datasheet PDF文件第9页  
®
IS61LV10248  
ISSI  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
TestConditions  
Min.  
2.4  
Max.  
Unit  
V
VOH  
VOL  
VIH  
VIL  
ILI  
OutputHIGHVoltage  
VDD = Min., IOH = –4.0 mA  
VDD = Min., IOL = 8.0 mA  
OutputLOWVoltage  
Input HIGH Voltage  
Input LOW Voltage(1)  
InputLeakage  
0.4  
V
2.2  
VDD + 0.3  
0.8  
V
–0.3  
V
GND VIN VDD  
Com.  
Ind.  
–1  
–5  
1
5
µA  
ILO  
OutputLeakage  
GND VOUT VDD, Outputs Disabled  
Com.  
Ind.  
–1  
–5  
1
5
µA  
Note:  
1. VIL=3.0Vforpulsewidthlessthan10ns.  
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-8  
-10  
Symbol Parameter  
Test Conditions  
Min.  
Max.  
Min.  
Max.  
Unit  
ICC  
VDD Dynamic Operating  
Supply Current  
VDD = Max.,  
IOUT = 0 mA, f = fMAX  
Com.  
Ind.  
110  
120  
100  
110  
mA  
ISB1  
TTL Standby Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = 0  
Com.  
Ind.  
30  
35  
30  
35  
mA  
mA  
ISB2  
CMOS Standby  
Current (CMOS Inputs)  
VDD = Max.,  
Com.  
Ind.  
20  
25  
20  
25  
CE VDD – 0.2V,  
VIN VDD – 0.2V, or  
VIN 0.2V, f = 0  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
04/13/06  
 复制成功!