欢迎访问ic37.com |
会员登录 免费注册
发布采购

IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IC43R16320B-6TL的Datasheet PDF文件第24页浏览型号IC43R16320B-6TL的Datasheet PDF文件第25页浏览型号IC43R16320B-6TL的Datasheet PDF文件第26页浏览型号IC43R16320B-6TL的Datasheet PDF文件第27页浏览型号IC43R16320B-6TL的Datasheet PDF文件第29页浏览型号IC43R16320B-6TL的Datasheet PDF文件第30页浏览型号IC43R16320B-6TL的Datasheet PDF文件第31页浏览型号IC43R16320B-6TL的Datasheet PDF文件第32页  
IS43R16320B  
IC43R16320B  
Auto Precharge  
Read with auto-precharge  
The precharge is automatically performed after completing a read operation. The precharge starts tRPD (BL/2)  
cycle after READA command input. tRAP specification for READA allows a read command with auto precharge to be  
issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column  
command to the other active bank can be issued the next cycle after the last data output. Read with auto-precharge  
command does not limit row commands execution for other bank. Refer to ‘Function truth table and related  
note(Notes.*14)‘.  
CK  
/CK  
tRPD  
tRP (min)  
tRAP (min) = tRCD (min)  
BL/2 cycles  
ACT  
READA  
NOP  
ACT  
Command  
DQS  
tAC,tDQSCK  
DQ  
out0 out1 out2 out3  
Note: Internal auto-precharge starts at the timing indicated by " ".  
Read with auto-precharge  
Write with auto-precharge  
The precharge is automatically performed after completing a burst write operation. The precharge operation is  
started (1 + BL/ 2 + tWR) cycles after WRITA command issued. A column command to the other banks can be  
issued the next cycle after the internal precharge command issued. Write with auto-precharge command does not  
limit row commands execution for other bank. Refer to the ‘Read with Auto-Precharge Enabled, Write with Auto-  
Precharge Enabled’ section. Refer to ‘Function truth table and related note(Notes.*14)‘.  
CK  
/CK  
tRAS (min)  
tRP  
tRCD (min)  
ACT  
NOP  
WRITA  
NOP  
ACT  
Command  
1 + BL/2 + tWR cycles  
DM  
DQS  
DQ  
in1 in2 in3 in4  
BL = 4  
Note: Internal auto-precharge starts at the timing indicated by " ".  
Burst Write (BL = 4)  
28  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. 00B  
06/11/08  
 复制成功!