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IC42S16400F-6TL 参数 Datasheet PDF下载

IC42S16400F-6TL图片预览
型号: IC42S16400F-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: 1梅格位×16位× 4银行( 64兆位)同步动态RAM [1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 55 页 / 822 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16400F  
IC42S16400F  
PIN FUNCTIONS  
Symbol  
TSOP Pin No.  
Type  
InputꢀPin  
Function (In Detail)  
A0-A11  
23ꢀtoꢀ26ꢀ  
AddressꢀInputs:ꢀA0-A11ꢀareꢀsampledꢀduringꢀtheꢀACTIVE  
commandꢀ(row-addressꢀA0-A11)ꢀandꢀREAD/WRITEꢀcommandꢀ(A0-A7  
29 to 34  
22, 35  
with A10 defining auto precharge) to select one location out of the memory array  
inꢀtheꢀrespectiveꢀbank.ꢀA10ꢀisꢀsampledꢀduringꢀaꢀPRECHARGEꢀcommandꢀtoꢀdeter-  
mine if all banks are to be precharged (A10 HIGH) or bank selected by  
BA0,ꢀBA1ꢀ(LOW).ꢀTheꢀaddressꢀinputsꢀalsoꢀprovideꢀtheꢀop-codeꢀduringꢀaꢀLOADꢀ  
MODEꢀREGISTERꢀcommand.  
BA0,ꢀBA1  
CAS  
20,ꢀ21ꢀ  
17ꢀ  
InputꢀPin  
InputꢀPin  
InputꢀPin  
BankꢀSelectꢀAddress:ꢀBA0ꢀandꢀBA1ꢀdefinesꢀwhichꢀbankꢀtheꢀACTIVE,ꢀREAD,ꢀWRITEꢀ  
orꢀPRECHARGEꢀcommandꢀisꢀbeingꢀapplied.  
CAS, in conjunction with the RAS and WE, forms the device command. See the  
"CommandꢀTruthꢀTable"ꢀforꢀdetailsꢀonꢀdeviceꢀcommands.ꢀ  
CKEꢀ  
37ꢀ  
TheꢀCKEꢀinputꢀdeterminesꢀwhetherꢀtheꢀCLKꢀinputꢀisꢀenabled.ꢀTheꢀnextꢀrisingꢀedgeꢀ  
ofꢀtheꢀCLKꢀsignalꢀwillꢀbeꢀvalidꢀwhenꢀisꢀCKEꢀHIGHꢀandꢀinvalidꢀwhenꢀLOW.ꢀWhenꢀCKEꢀ  
isꢀLOW,ꢀtheꢀdeviceꢀwillꢀbeꢀinꢀeitherꢀpower-downꢀmode,ꢀclockꢀsuspendꢀmode,ꢀorꢀselfꢀ  
refresh mode. CKEꢀisꢀan asynchronous input.  
CLKꢀ  
38ꢀ  
19ꢀ  
InputꢀPin  
CLKꢀisꢀtheꢀmasterꢀclockꢀinputꢀforꢀthisꢀdevice.ꢀExceptꢀforꢀCKE,ꢀallꢀinputsꢀtoꢀthisꢀdeviceꢀ  
are acquired in synchronization with the rising edge of this pin.  
CS  
InputꢀPin  
TheꢀCS input determines whether command input is enabled within the device.  
Command input is enabled when CSꢀisꢀLOW,ꢀandꢀdisabledꢀwithꢀCSꢀisꢀHIGH.ꢀTheꢀ  
device remains in the previous state when CS is HIGH.  
DQ0ꢀtoꢀ  
DQ15ꢀ  
2,ꢀ4,ꢀ5,ꢀ7,ꢀ8,ꢀ10,ꢀ  
11,13, 42, 44, 45,  
47,ꢀ48,ꢀ50,ꢀ51,ꢀ53  
15,ꢀ39ꢀ  
DQꢀPin  
DQ0ꢀtoꢀDQ15ꢀareꢀI/Oꢀpins.ꢀI/Oꢀthroughꢀtheseꢀpinsꢀcanꢀbeꢀcontrolledꢀinꢀbyteꢀunits  
usingꢀtheꢀLDQMꢀandꢀUDQMꢀpins.  
LDQM,ꢀ  
UDQMꢀ  
InputꢀPin  
LDQMꢀandꢀUDQMꢀcontrolꢀtheꢀlowerꢀandꢀupperꢀbytesꢀofꢀtheꢀI/Oꢀbuffers.ꢀInꢀread  
mode,ꢀLDQMꢀandꢀUDQMꢀcontrolꢀtheꢀoutputꢀbuffer.ꢀWhenꢀLDQMꢀorꢀUDQMꢀisꢀLOW,ꢀ  
theꢀcorrespondingꢀbufferꢀbyteꢀisꢀenabled,ꢀandꢀwhenꢀHIGH,ꢀdisabled.ꢀTheꢀoutputsꢀ  
goꢀtoꢀtheꢀHIGHꢀimpedanceꢀstateꢀwhenꢀLDQM/UDQMꢀisꢀHIGH.ꢀThisꢀfunctionꢀcor-  
responds to OEꢀinꢀconventionalꢀDRAMs.ꢀInꢀwriteꢀmode,ꢀLDQMꢀandꢀUDQMꢀcontrolꢀ  
theꢀinputꢀbuffer.ꢀWhenꢀLDQMꢀorꢀUDQMꢀisꢀLOW,ꢀtheꢀcorrespondingꢀbufferꢀbyteꢀisꢀen-  
abled,ꢀandꢀdataꢀcanꢀbeꢀwrittenꢀtoꢀtheꢀdevice.ꢀWhenꢀLDQMꢀorꢀUDQMꢀisꢀHIGH,ꢀinputꢀ  
data is masked and cannot be written to the device.  
RAS  
WE  
18ꢀ  
16ꢀ  
InputꢀPin  
RAS, in conjunction with CAS and WE, forms the device command. See the "Com-  
mandꢀTruthꢀTable"ꢀitemꢀforꢀdetailsꢀonꢀdeviceꢀcommands.  
ꢀInputꢀPin  
WE, in conjunction with RAS and CAS, forms the device command. See the "Com-  
mandꢀTruthꢀTable"ꢀitemꢀforꢀdetailsꢀonꢀdeviceꢀcommands.ꢀ  
VD D q  
VD D  
3,ꢀ9,ꢀ43,ꢀ49ꢀ  
1,ꢀ14,ꢀ27ꢀ  
PowerꢀSupplyꢀPin  
PowerꢀSupplyꢀPin  
VD D q is the output buffer power supply.  
VD D is the device internal power supply.  
GNDq  
GND  
6,ꢀ12,ꢀ46,ꢀ52ꢀ  
28,ꢀ41,ꢀ54ꢀ  
PowerꢀSupplyꢀPin GNDq is the output buffer ground.  
PowerꢀSupplyꢀPin GND is the device internal ground.  
Integrated Silicon Solution, Inc. — www.issi.com  
3
Rev. A  
03/19/08