IC41C8512
IC41LV8512
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
3.3V
–1.0 to +7.0
–0.5 to +4.6
V
VCC
Supply Voltage
5V
3.3V
–1.0 to +7.0
–0.5 to +4.6
V
IOUT
PD
Output Current
50
1
mA
W
Power Dissipation
TA
Commercial Operation Temperature
Industrial Operationg Temperature
0 to +70
–40 to +85
°C
°C
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
3.3V
4.5
3.0
5.0
3.3
5.5
3.6
V
VIH
VIL
TA
Input High Voltage
Input Low Voltage
5V
3.3V
2.4
2.0
—
—
VCC + 1.0
VCC + 0.3
V
V
5V
3.3V
–1.0
–0.3
—
—
0.8
0.8
Commercial Ambient Temperature
Industrial Ambient Temperature
0
–40
—
—
70
85
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
CIN2
CIO
Input Capacitance: A0-A9
5
7
7
pF
pF
pF
Input Capacitance: RAS, CAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
6
Integrated Circuit Solution Inc.
DR029-0A 09/28/2001
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
