IC41C8512
IC41LV8512
512K x 8 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
DESCRIPTION
FEATURES
The ICSI IC41C8512 and IC41LV8512 is a 524,288 x 8-bit high-
performance CMOS Dynamic Random Access Memories. The
IC41C8512 offer an accelerated cycle access called EDO Page
Mode. EDO Page Mode allows 1024 random accesses within
a single row with access cycle time as short as 12 ns per 8-bit
word.
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 1024 cycles /16 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR),
Hidden
• Single power supply:
These features make the IC41C8512and IC41LV8512 ideally
suited for, digital signal processing, high-performance audio
systems, and peripheral applications.
5V ± 10% (IC41C8512)
3.3V ± 10% (IC41LV8512)
• Industrail Temperature Range -40oC to 85oC
The IC41C8512 is packaged in a 28-pin 400mil SOJ and 400mil
TSOP-2.
KEY TIMING PARAMETERS
Parameter
-35
35
10
18
12
60
-50
50
14
25
20
90
-60
60
Unit
ns
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. EDO Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
15
ns
30
ns
25
ns
110
ns
PIN CONFIGURATION
28 Pin SOJ, TSOP-2
PIN DESCRIPTIONS
VCC
I/O0
I/O1
I/O2
I/O3
NC
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
GND
I/O7
I/O6
I/O5
I/O4
CAS
OE
A0-A9
I/O0-7
WE
Address Inputs
2
Data Inputs/Outputs
Write Enable
3
4
OE
Output Enable
Row Address Strobe
Column Address Strobe
Power
5
6
RAS
CAS
Vcc
WE
RAS
A9
7
8
NC
9
A8
A0
10
11
12
13
14
A7
GND
NC
Ground
A1
A6
No Connection
A2
A5
A3
A4
VCC
GND
2
Integrated Circuit Solution Inc.
DR029-0A 09/28/2001
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
