IRFP4768PbF
6.0
VGS(th) , Gate threshold Voltage (V)
70
60
50
IRRM (A)
5.0
4.0
3.0
2.0
1.0
0.0
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
IF = 37A
V R = 200V
TJ = 25°C
TJ = 125°C
ID = 250µA
ID = 1.0A
40
30
20
10
0
200
400
600
800
1000
diF /dt (A/µs)
ID = 1.0mA
Fig 16.
Threshold Voltage vs. Temperature
90
80
70
60
50
40
30
20
10
0
200
400
600
800
1000
diF /dt (A/µs)
IF = 56A
V R = 200V
TJ = 25°C
TJ = 125°C
QRR (nC)
Fig. 17
- Typical Recovery Current vs. di
f
/dt
6000
IF = 37A
V R = 200V
TJ = 25°C
TJ = 125°C
5000
IRRM (A)
4000
3000
2000
1000
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 18
- Typical Recovery Current vs. di
f
/dt
8000
7000
6000
QRR (nC)
Fig. 19
- Typical Stored Charge vs. di
f
/dt
IF = 56A
V R = 200V
TJ = 25°C
TJ = 125°C
5000
4000
3000
2000
1000
0
200
400
600
800
1000
diF /dt (A/µs)
6
Fig. 20
- Typical Stored Charge vs. di
f
/dt
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