IRFP4768PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
10
4.5V
0.1
4.5V
0.01
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
1
100
1000
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 56A
VGS = 10V
100
10
T J = 175°C
T J = 25°C
1
VDS = 50V
≤60µs
PULSE WIDTH
3
4
5
6
7
8
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
Coss = Cds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 56A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 200V
VDS= 125V
VDS= 50V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
30
60
90
120 150 180 210 240
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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