PD - 97379
IRFP4768PbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
250V
14.5m
Ω
17.5m
Ω
93A
D
G
D
S
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
93
66
370
520
3.4
± 20
24
-55 to + 175
300
10lbfxin (1.1Nxm)
770
See Fig. 14, 15, 22a, 22b
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
d
Avalanche Current
c
Repetitive Avalanche Energy
c
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
ij
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
www.irf.com
1
02/26/09
IRF [ INTERNATIONAL RECTIFIER ]
