IRFP4768PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
T J = 175°C
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
10
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
1000
Fig 8.
Maximum Safe Operating Area
320
Id = 5mA
ISD, Reverse Drain Current (A)
100
T J = 175°C
T J = 25°C
300
10
280
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
260
240
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
20.0
18.0
16.0
14.0
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
3200
EAS , Single Pulse Avalanche Energy (mJ)
2800
2400
2000
1600
1200
800
400
0
ID
TOP
12A
17A
BOTTOM 56A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-50
0
50
100
150
200
250
300
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
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