IRFP4768PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
250
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.20
14.5
–––
–––
–––
–––
–––
0.71
–––
–––
17.5
5.0
20
250
100
-100
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mAc
mΩ V
GS
= 10V, I
D
= 56A
f
V V
DS
= V
GS
, I
D
= 250µA
µA V
DS
= 250V, V
GS
= 0V
V
DS
= 250V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
h
Effective Output Capacitance (Time Related)g
Min. Typ. Max. Units
100 ––– –––
––– 180 270
–––
52
–––
–––
72
–––
––– 108 –––
–––
36
–––
––– 160 –––
–––
57
–––
––– 110 –––
––– 10880 –––
––– 700 –––
––– 210 –––
––– 510 –––
––– 830 –––
S
nC
Conditions
V
DS
= 50V, I
D
= 56A
I
D
= 56A
V
DS
=125V
V
GS
= 10V
f
I
D
= 56A, V
DS
=0V, V
GS
= 10V
V
DD
= 163V
I
D
= 56A
R
G
= 1.0Ω
V
GS
= 10V
f
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 200V
h,
See Fig. 11
V
GS
= 0V, V
DS
= 0V to 200V
g
ns
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
93
370
A
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
––– –––
1.3
V
––– 180 –––
ns
––– 200 –––
––– 1480 –––
nC
T
J
= 125°C
––– 2260 –––
–––
16
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 56A, V
GS
= 0V
f
T
J
= 25°C
V
R
= 200V,
T
J
= 125°C
I
F
= 56A
di/dt = 100A/µs
f
T
J
= 25°C
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.50mH
R
G
= 25Ω, I
AS
= 56A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
56A, di/dt
≤
950A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
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