欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRF8302MPBF_15 参数 Datasheet PDF下载

IRF8302MPBF_15图片预览
型号: IRF8302MPBF_15
PDF下载: 下载PDF文件 查看货源
内容描述: [Dual Sided Cooling Compatible]
分类和应用:
文件页数/大小: 9 页 / 274 K
品牌: INFINEON [ Infineon ]
 浏览型号IRF8302MPBF_15的Datasheet PDF文件第1页浏览型号IRF8302MPBF_15的Datasheet PDF文件第2页浏览型号IRF8302MPBF_15的Datasheet PDF文件第3页浏览型号IRF8302MPBF_15的Datasheet PDF文件第4页浏览型号IRF8302MPBF_15的Datasheet PDF文件第5页浏览型号IRF8302MPBF_15的Datasheet PDF文件第6页浏览型号IRF8302MPBF_15的Datasheet PDF文件第8页浏览型号IRF8302MPBF_15的Datasheet PDF文件第9页  
IRF8302MPbF  
Driver Gate Drive  
P.W.  
P.W.  
Period  
D.U.T  
Period  
D =  
+
V***  
=10V  
GS  
ƒ
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
*
VDD  
**  
Re-Applied  
Voltage  
dv/dt controlled by RG  
RG  
+
-
Body Diode  
Forward Drop  
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
Inductor Curent  
I
SD  
Ripple  
5%  
* Use P-Channel Driver for P-Channel Measurements  
** Reverse Polarity for P-Channel  
*** VGS = 5V for Logic Level Devices  
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs  
DirectFET® Board Footprint, MX Outline  
(Medium Size Can, X-Designation).  
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.  
This includes all recommendations for stencil and substrate designs.  
G=GATE  
D=DRAIN  
S=SOURCE  
D
D
D
D
S
S
G
7
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback  
February 17, 2014  
 复制成功!