IRF8302MPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
1
2.5V
1
0.1
0.01
2.5V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 15V
I
= 31A
DS
D
≤
60µs PULSE WIDTH
V
V
= 10V
GS
GS
= 4.5V
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
10
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
ds
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
iss
gs
gd
= C
rss
oss
gd
= C + C
8
6
4
2
0
ds
gd
C
C
iss
oss
C
rss
100
0
50
100
150
200
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
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February 17, 2014
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INFINEON [ Infineon ]
