IRF8302MPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100µsec
1msec
10msec
DC
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
1
T
= 25°C
A
T = 150°C
J
V
= 0V
GS
Single Pulse
0.1
0
0.01 0.10
1.00
10.00
100.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
200
2.4
2.2
2.0
1.8
1.6
1.4
150
100
50
I
= 10mA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
1200
I
D
TOP
1.3A
2.2A
1000
800
600
400
200
0
BOTTOM 25A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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February 17, 2014
INFINEON [ Infineon ]
