IRF8302MPbF
l RoHs Compliant and Halogen-Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
HEXFET® Power MOSFET plus Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
30V max ±20V max
1.4mΩ@ 10V 2.2mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
35nC
8.9nC 5.1nC
40nC
29nC
1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MP
MX
Description
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Base Part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRF8302MPbF
DirectFET MX
Tape and Reel
4800
IRF8302MTRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
30
±20
31
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
25
@ TA = 70°C
@ TC = 25°C
A
190
250
260
25
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
6
5
4
3
2
1
0
14.0
12.0
10.0
8.0
I
= 31A
I = 25A
D
D
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
T
= 125°C
J
6.0
4.0
T
= 25°C
2.0
J
0.0
0
2
4
6
8
10 12 14 16 18 20
0
10 20 30 40 50 60 70 80 90 100
Total Gate Charge (nC)
Q
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.83mH, RG = 25Ω, IAS = 25A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com © 2014 International Rectifier
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February 17, 2014
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