IRF8302MPbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max. Units
VGS = 0V, ID = 1.0mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1.4
2.2
1.8
-4.2
–––
–––
–––
–––
–––
35
–––
V
Reference to 25°C, ID = 10mA
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
V
GS = 10V, ID = 31A
1.8
2.7
m
Ω
VGS = 4.5V, ID = 25A
VDS = VGS, ID = 150µA
VGS(th)
Gate Threshold Voltage
2.35
V
V
DS = VGS, ID = 10mA
VDS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
V
/ T
∆
J
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
GS(th)
IDSS
100
5.0
µA
mA
nA
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
53
V
VDS = 15V, ID = 25A
gfs
Qg
S
VDS = 15V
VGS = 4.5V
ID = 25A
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
11
–––
–––
–––
–––
–––
–––
2.2
Qgs2
Qgd
5.1
8.9
10
nC
Qgodr
See Fig. 15
Qsw
14
V
DS = 16V, VGS = 0V
Qoss
RG
29
nC
Gate Resistance
1.3
22
Ω
VDD = 15V, VGS = 4.5V
ID = 25A
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
Rise Time
37
ns
RG = 1.8Ω
See Fig. 17
Turn-Off Delay Time
20
Fall Time
15
V
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 6030 –––
––– 1360 –––
DS = 15V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
560
–––
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
–––
–––
31
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
250
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
di/dt = 300A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
30
0.80
45
V
ns
nC
Qrr
40
60
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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February 17, 2014
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