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ISL88731A 参数 Datasheet PDF下载

ISL88731A图片预览
型号: ISL88731A
PDF下载: 下载PDF文件 查看货源
内容描述: SMBus的Level 2电池充电器 [SMBus Level 2 Battery Charger]
分类和应用: 电池
文件页数/大小: 22 页 / 463 K
品牌: INTERSIL [ Intersil ]
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ISL88731A  
frequency and a conservative design has F  
less than  
charger application, the input voltage of the synchronous  
CO  
10% of the switching frequency. The highest F  
is in  
buck converter is equal to the AC-adapter output voltage,  
which is relatively constant. The maximum efficiency is  
achieved by selecting a high-side MOSFET that has the  
conduction losses equal to the switching losses. Switching  
losses in the low-side FET are very small. The choice of  
low-side FET is a trade-off between conduction losses  
CO  
voltage control mode with the battery removed and may be  
calculated (approximately) from Equation 5:  
5 11 R  
SENSE  
------------------------------------------  
=
F
CO  
2π ⋅ L  
(EQ. 5)  
(r  
) and cost. A good rule of thumb for the r  
of  
DS(ON)  
the low-side FET is 2x the r  
DS(ON)  
Output Capacitor Selection  
of the high-side FET.  
DS(ON)  
The output capacitor in parallel with the battery is used to  
absorb the high frequency switching ripple current and  
smooth the output voltage. The RMS value of the output  
The LGATE gate driver can drive sufficient gate current to  
switch most MOSFETs efficiently. However, some FETs may  
exhibit cross conduction (or shoot-through) due to current  
ripple current I  
is given by Equation 6:  
RMS  
injected into the drain-to-source parasitic capacitor (C ) by  
gd  
V
IN, MAX  
the high dV/dt rising edge at the phase node when the  
high-side MOSFET turns on. Although LGATE sink current  
(1.8A typical) is more than enough to switch the FET off  
quickly, voltage drops across parasitic impedances between  
LGATE and the MOSFET can allow the gate to rise during  
the fast rising edge of voltage on the drain. MOSFETs with  
low threshold voltage (<1.5V) and low ratio of C /C (<5)  
and high gate resistance (>4Ω) may be turned on for a few  
ns by the high dV/dt (rising edge) on their drain. This can be  
avoided with higher threshold voltage and C /C ratio.  
-----------------------------------  
D ⋅ (1 D)  
I
=
RMS  
12 L F  
(EQ. 6)  
SW  
Where the duty cycle D is the ratio of the output voltage  
(battery voltage) over the input voltage for continuous  
conduction mode which is typical operation for the battery  
charger. During the battery charge period, the output voltage  
varies from its initial battery voltage to the rated battery  
voltage. So, the duty cycle varies from 0.53 for the minimum  
battery voltage of 7.5V (2.5V/Cell) to 0.88 for the maximum  
battery voltage of 12.6V. The maximum RMS value of the  
output ripple current occurs at the duty cycle of 0.5 and is  
expressed as Equation 7:  
gs gd  
gs gd  
Another way to avoid cross conduction is slowing the turn-on  
speed of the high-side MOSFET by connecting a resistor  
between the BOOT pin and the boot strap capacitor.  
V
IN, MAX  
-------------------------------------------  
I
=
RMS  
For the high-side MOSFET, the worst-case conduction  
losses occur at the minimum input voltage, as shown in  
Equation 8:  
4 12 L F  
(EQ. 7)  
SW  
For V  
= 19V, V = 16.8V, L = 10µH, and  
BAT  
IN,(MAX)  
f = 400kHz, the maximum RMS current is 0.19A. A typical  
s
V
2
OUT  
---------------  
(EQ. 8)  
20µF ceramic capacitor is a good choice to absorb this  
current and also has very small size. Organic polymer  
capacitors have high capacitance with small size and have a  
significant equivalent series resistance (ESR). Although  
ESR adds to ripple voltage, it also creates a high frequency  
zero that helps the closed loop operation of the buck  
regulator.  
P
=
I  
r  
BAT DS(ON)  
Q1, conduction  
V
IN  
The optimum efficiency occurs when the switching losses  
equal the conduction losses. However, it is difficult to  
calculate the switching losses in the high-side MOSFET  
since it must allow for difficult-to-quantify factors that  
influence the turn-on and turn-off times. These factors  
include the MOSFET internal gate resistance, gate charge,  
threshold voltage, stray inductance and the pull-up and pull-  
down resistance of the gate driver.  
EMI considerations usually make it desirable to minimize  
ripple current in the battery leads. Beads may be added in  
series with the battery pack to increase the battery  
impedance at 400kHz switching frequency. Switching ripple  
current splits between the battery and the output capacitor  
depending on the ESR of the output capacitor and battery  
impedance. If the ESR of the output capacitor is 10mΩ and  
battery impedance is raised to 2Ω with a bead, then only  
0.5% of the ripple current will flow in the battery.  
The following switching loss calculation (Equation 9)  
provides a rough estimate.  
P
=
Q1, Switching  
Q
Q
gd  
1
1
2
gd  
--  
------------------------  
--  
-----------------  
V
I
f
+
V
I
f
+ Q V f  
rr IN sw  
IN LV sw  
IN LP sw  
2
I
I
g, source  
g, sink  
(EQ. 9)  
Where, the following are the peak gate-drive source/sink  
current of Q , respectively:  
MOSFET Selection  
1
The Notebook battery charger synchronous buck converter  
has the input voltage from the AC-adapter output. The  
maximum AC-adapter output voltage does not exceed 25V.  
Therefore, 30V logic MOSFET should be used.  
• Q : drain-to-gate charge,  
gd  
• Q : total reverse recovery charge of the body-diode in  
rr  
low-side MOSFET,  
• I : inductor valley current,  
LV  
• I : Inductor peak current,  
LP  
The high-side MOSFET must be able to dissipate the  
conduction losses plus the switching losses. For the battery  
• I  
g,sink  
• I ,  
g source  
FN6738.0  
July 23, 2008  
16  
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