ISL705ARH, ISL705BRH, ISL705CRH, ISL706ARH, ISL706BRH, ISL706CRH
BACKSIDE FINISH
Weight Characteristics
Weight of Packaged Device
Silicon
PROCESS
0.31 Grams typical
0.6µM BiCMOS Junction Isolated
Die Characteristics
ASSEMBLY RELATED INFORMATION
Die Dimensions
Substrate Potential
2030µm x 2030µm (79.9 mils x 79.9 mils)
Thickness: 483µm ± 25.4µm (19.0 mils ± 1 mil)
Unbiased
ADDITIONAL INFORMATION
Interface Materials
Worst Case Current Density
5
2
GLASSIVATION
< 2 x 10 A/cm
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
Transistor Count
25030
TOP METALLIZATION
Layout Characteristics
Step and Repeat
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
TOP METALLIZATION
2030µm x 2030µm
Type: Silicon
Metallization Mask Layout
MR
WDO
VDD
RST, RST, RST_OD
GND
WDI
PFO
PFI
FN7662.0
September 15, 2011
13
INTERSIL [ Intersil ]
