HA-2420, HA-2425
Die Characteristics
DIE DIMENSIONS:
102 mils x 61 mils x 19 mils
2590µm x 1550µm x 483µm
PASSIVATION:
Type: Nitride (Si N ) over Silox (SiO , 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
3
4
2
Nitride Thickness: 3.5kÅ ±1.5kÅ
METALLIZATION:
Type: Al, 1% Cu
TRANSISTOR COUNT:
Thickness: 16kÅ ±2kÅ
78
SUBSTRATE POTENTIAL:
PROCESS:
V-
Bipolar Dielectric Isolation
BACKSIDE FINISH:
Gold, Nickel, Silicon, etc.
Metallization Mask Layout
HA-2420, HA-2425
GND
VOS ADJ
VOS ADJ
HOLD CAP
V-
V+
OUTPUT
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