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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
The only other valid commands while block erase is suspended are Read Query, Read Status  
Register, Clear Status Register, Configure, and Block Erase Resume. After a Block Erase Resume  
command is written to the flash memory, the WSM will continue the block erase process. SR.6 and  
SR.7 will automatically clear and STS (in default mode) will return to VOL. After the Erase  
Resume command is written, the device automatically outputs SRD when read (see Figure 23,  
“Block Erase Suspend/Resume Flowchart” on page 64). VPEN must remain at VPENH (the same  
VPEN level used for block erase) while block erase is suspended. Block erase cannot resume until  
program operations initiated during block erase suspend have completed.  
12.3  
Erase Resume  
To resume (i.e., continue) an erase suspend operation, execute the Erase Resume command. The  
Resume command can be written to any device address. When a program operation is nested  
within an erase suspend operation and the Program Suspend command is issued, the device will  
suspend the program operation. When the Resume command is issued, the device will resume the  
program operations first. Once the nested program operation is completed, an additional Resume  
command is required to complete the block erase operation. The device supports a maximum  
suspend/resume of two nested routines. See Figure 22, “Block Erase Flowchart” on page 63.  
Datasheet  
45  
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