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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
11.0  
Programming Operations  
The device supports two different programming methods: word programming, and write-buffer  
programming. Successful programming requires the addressed block to be unlocked. An attempt to  
program a locked block will result in the operation aborting, and SR.1 and SR.4 being set,  
indicating a programming error. The following sections describe device programming in detail.  
11.1  
Byte/Word Program  
Byte/Word program is executed by a two-cycle command sequence. Byte/Word program setup  
(standard 0x40 or alternate 0x10) is written followed by a second write that specifies the address  
and data (latched on the rising edge of WE#). The WSM then takes over, controlling the program  
and program verify algorithms internally. After the program sequence is written, the device  
automatically outputs SRD when read (see Figure 20, “Byte/Word Program Flowchart” on  
page 61). The CPU can detect the completion of the program event by analyzing the STS signal or  
SR.7.  
When program is complete, SR.4 should be checked. If a program error is detected, the Status  
Register should be cleared. The internal WSM verify only detects errors for “1”s that do not  
successfully program to “0”s. The CUI remains in Read Status Register mode until it receives  
another command.  
Reliable byte/word programming can only occur when VCC and VPEN are valid. If a byte/word  
program is attempted while VPEN VPENLK, SR.4 and SR.3 will be set. Successful byte/word  
programs require that the corresponding block lock-bit be cleared. If a byte/word program is  
attempted when the corresponding block lock-bit is set, SR.1 and SR.4 will be set.  
11.2  
Write to Buffer  
To program the flash device, a Write to Buffer command sequence is initiated. A variable number  
of bytes, up to the buffer size, can be loaded into the buffer and written to the flash device. First, the  
Write to Buffer Setup command is issued along with the Block Address (see Figure 18, “Write to  
Buffer Flowchart” on page 59). At this point, the eXtended Status Register (XSR, see Table 19)  
information is loaded and XSR.7 reverts to “buffer available” status. If XSR.7 = 0, the write buffer  
is not available. To retry, continue monitoring XSR.7 by issuing the Write to Buffer setup  
command with the Block Address until XSR.7 = 1. When XSR.7 transitions to a “1,” the buffer is  
ready for loading.  
Next, a word/byte count is given to the part with the Block Address. On the next write, a device  
start address is given along with the write buffer data. Subsequent writes provide additional device  
addresses and data, depending on the count. All subsequent addresses must lie within the start  
address plus the count.  
Internally, this device programs many flash cells in parallel. Because of this parallel programming,  
maximum programming performance and lower power are obtained by aligning the start address at  
the beginning of a write buffer boundary (i.e., A[4:0] of the start address = 0).  
42  
Datasheet  
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