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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
 浏览型号TE28F128J3C-150的Datasheet PDF文件第45页浏览型号TE28F128J3C-150的Datasheet PDF文件第46页浏览型号TE28F128J3C-150的Datasheet PDF文件第47页浏览型号TE28F128J3C-150的Datasheet PDF文件第48页浏览型号TE28F128J3C-150的Datasheet PDF文件第50页浏览型号TE28F128J3C-150的Datasheet PDF文件第51页浏览型号TE28F128J3C-150的Datasheet PDF文件第52页浏览型号TE28F128J3C-150的Datasheet PDF文件第53页  
256-Mbit J3 (x8/x16)  
Table 21. Byte-Wide Protection Register Addressing (Sheet 2 of 2)  
6
7
Factory  
Factory  
User  
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
8
9
User  
A
B
C
D
E
F
User  
User  
User  
User  
User  
User  
NOTE: All address lines not specified in the above table must be 0 when accessing the Protection Register,  
i.e.g., A[MAX:9] = 0.  
13.4  
Array Protection  
The VPEN signal is a hardware mechanism to prohibit array alteration. When the VPEN voltage is  
below the VPENLK voltage, array contents cannot be altered. To ensure a proper erase or program  
operation, VPEN must be set to a valid voltage level. To determine the status of an erase or program  
operation, poll the Status Register and analyze the bits.  
Datasheet  
49  
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