3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family
—
5.11
SRAM Data Retention Characteristics Extended
Temperature
Table 19. SRAM Data Retention Characteristics(1)—Extended Temperature
Sym
Parameter
Note
Min
Typ
Max
Unit
Test Conditions
CS # ≥V 0.2 V
V
S-V for Data Retention
CC
1.5
–
3.3
V
DR
1
CC –
Deep Retention Current -
8-Mbit
–
–
–
–
–
6
5
4
µA
µA
µA
Deep Retention Current -
4-Mbit
S-V = 1.5 V
CC
2
I
DR
CS # ≥V
0.2 V
1
CC –
Deep Retention Current -
2-Mbit
–
0
t
t
Data Retention Set-up Time
Recovery Time
–
–
–
–
ns
ns
See Data Retention Waveform
SDR
RDR
t
RC
NOTES:
1. Typical values at nominal S-V , T
= +25 °C.
CC CASE
2. S-CS1# ≥V
0.2 V, S-CS2 ≥V
0.2 V (S-CS1# controlled) or S-CS2 ≤ 0.2 V (S-CS2 controlled).
CC –
CC –
Figure 11. SRAM Data Retention Waveform
tSDR
Data Retention Mode
tRDR
CS1# Controlled
VCC
3.0/2.7V
2.2V
CS1# (E1)
VDR
GND
Data Retention Mode
tSDR
CS2 Controlled
tRDR
VCC
3.0/2.7V
CS2 (E2)
VDR
0.4V
GND
Datasheet
39
INTEL [ INTEL ]
