3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family
Table 11. DC Characteristics (Sheet 2 of 2)
2.7 V – 3.3 V
Symbol
Parameter
Device
Note
Unit
Test Conditions
Typ
Max
F-V = V
PP
PP1
18
55
mA
mA
mA
Program in Progress
F-V = V (12 V)
I
V
Program Current
Flash
1,3
CCW
CC
PP
PP2
8
16
8
22
45
15
Program in Progress
F-V = V
PP
PP1
Erase in Progress
F-V = V (12 V)
I
I
V
V
Erase Current
Flash
Flash
1,3
CCE
CC
PP
PP2
mA
µA
Erase in Progress
F-CE# = V , Erase Suspend
in Progress
CC
Erase Suspend Current
1,3,4
1,3,4
7
15
25
CCES
CC
0.25µm
Flash
10
F-CE# = V , Program
CC
0.13µm
and
0.18µm
Flash
I
V
Program Suspend Current
µA
CCWS
CC
Suspend in Progress
1,3,4
7
15
F-RP# = GND ± 0.2 V
I
I
F-V Deep Power-Down Current
Flash
Flash
1
0.2
5
µA
PPD
PPS
PP
F-V ≤ V
PP
CC
CC
F-V Standby Current
1
1
0.2
2
5
µA
µA
µA
F-V ≤ V
PP
PP
±15
200
F-V ≤ V
PP CC
I
F-V Read Current
Flash
PPR
PP
1,2
50
F-V ≥ V
PP CC
F-V =V
PP
PP1
0.05
8
0.1
22
mA
mA
ma
µA
Program in Progress
F-V = V (12 V)
I
I
I
F-V Program Current
Flash
Flash
Flash
1,2
1,2
1,2
PPW
PPE
PP
PP
PP2
Program in Progress
F-V = V
PP
PP1
F-V Erase Current
0.05
0.2
50
0.1
5
PP
Erase in Progress
F-V = V
PP
PP1
Erase Suspend in Progress
F-V = V (12 V)
F-V Erase Suspend Current
PPES
PP
PP
PP2
200
µA
Erase Suspend in Progress
F-V = V
PP
PP1
0.2
50
5
µA
µA
Program Suspend in Progress
I
F-V Program Suspend Current
Flash
1,2
PPWS
PP
F-V = V (12 V)
PP
PP2
200
Program Suspend in Progress
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal F-V /S-V , T
= +25 °C.
CC
CC CASE
2. Automatic Power Savings (APS) reduces I
3. Sampled, not 100% tested.
to approximately standby levels in static operation (CMOS inputs).
CCR
4. I
and I
are specified with device de-selected. If device is read while in erase suspend, current draw is sum of I
CCES
CCWS CCES
and I
. If the device is read while in program suspend, current draw is the sum of I
and I
.
CCR
CCWS
CCR
Datasheet
27
INTEL [ INTEL ]
