欢迎访问ic37.com |
会员登录 免费注册
发布采购

RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
 浏览型号RD28F1602C3B110的Datasheet PDF文件第21页浏览型号RD28F1602C3B110的Datasheet PDF文件第22页浏览型号RD28F1602C3B110的Datasheet PDF文件第23页浏览型号RD28F1602C3B110的Datasheet PDF文件第24页浏览型号RD28F1602C3B110的Datasheet PDF文件第26页浏览型号RD28F1602C3B110的Datasheet PDF文件第27页浏览型号RD28F1602C3B110的Datasheet PDF文件第28页浏览型号RD28F1602C3B110的Datasheet PDF文件第29页  
3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
5.2  
Operating Conditions  
Table 10. Temperature and Voltage Operating Conditions  
Symbol  
Parameter  
Notes  
Min  
Max  
Units  
T
Operating Temperature  
–25  
+85  
°C  
CASE  
F-V /F-V  
Voltage  
/S-V Supply  
CC  
CC  
CCQ  
V
/ V  
1
2.7  
3.3  
Volts  
CC  
CCQ  
V
V
Supply Voltage  
1
1, 2  
2
1.65  
11.4  
3.3  
Volts  
Volts  
PP1  
PP2  
12.6  
Cycling  
Block Erase Cycling  
100,000  
Cycles  
NOTES:  
1. F-V /F-V  
must share the same supply. F-V /S-V must share the same supply when not in data  
CC CC  
CC  
CCQ  
retention.  
2. Applying F-V  
11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles  
PP =  
on the main blocks and 2500 cycles on the parameter blocks. F-V may be connected to 12 V for a total  
PP  
of 80 hours maximum. See Section 4.2.1 for details.  
5.3  
Capacitance  
TCASE = +25°C, f = 1 MHz  
Sym  
Parameter  
Notes  
Typ  
Max  
Units  
Conditions  
= 0 V  
C
Input Capacitance  
Output Capacitance  
1
1
16  
20  
18  
22  
pF  
pF  
V
V
IN  
IN  
C
= 0 V  
OUT  
OUT  
NOTE: Sampled, not 100% tested.  
Datasheet  
25  
 复制成功!