3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family
5.6
Flash AC Characteristics—Write Operations
Table 14. Flash AC Characteristics—Write Operations
Density
16-Mbit
-90
32-Mbit
Product -70
-110
-70
-90
#
Sym
Parameter
Unit
Voltage Range
2.7 V - 3.3 V
Min Min Min
Note
Min
Min
W1
W2
W3
W4
W5
W6
W7
W8
W9
W10
W11
t
t
t
t
t
t
t
t
t
t
t
t
F-RP# High Recovery to F-WE# (F-CE#) Going Low
F-CE# (F-WE#) Setup to F-WE# (F-CE#) Going Low
F-WE# (F-CE#) Pulse Width
150 150
150
0
150
0
150
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PHWL PHEL
t
0
45
40
50
0
0
60
50
60
0
ELWL WLEL
t
1
2
2
70
60
70
0
45
40
50
0
60
40
60
0
ELEH WLWH
t
Data Setup to F-WE# (F-CE#) Going High
Address Setup to F-WE# (F-CE#) Going High
F-CE# (F-WE#) Hold Time from F-WE# (F-CE#) High
Data Hold Time from F-WE# (F-CE#) High
Address Hold Time from F-WE# (F-CE#) High
F-WE# (F-CE#) Pulse Width High
DVWH DVEH
t
AVWH AVEH
t
WHEH EHWH
t
2
2
1
3
3
0
0
0
0
0
WHDX EHDX
t
0
0
0
0
0
WHAX EHAX
t
25
30
30
200
0
25
200
0
30
200
0
WHWL EHEL
t
F-V Setup to F-WE# (F-CE#) Going High
200 200
VPWH VPEH
PP
F-V Hold from Valid SRD
0
0
QVVL
PP
NOTES:
1. Write pulse width (t ) is defined from F-CE# or F-WE# going low (whichever goes low last) to F-CE# or
WP
F-WE# going high (whichever goes high first). Hence, t = t
= t
= t
= t
. Similarly, write pulse width high
WP
WLWH
ELEH
WLEH
ELWH
(t
) is defined from F-CE# or F-WE# going high (whichever goes high first) to F-CE# or
WPH
F-WE# going low (whichever goes low first). Hence, t
= t
= t
= t
= t
WPH
WHWL
EHEL
WHEL
EHWL.
2. Refer to Table 5, “Flash Memory Command Definitions” on page 17 for valid A or D
.
IN
IN
3. Sampled, but not 100% tested.
See Figure 4, “Input/Output Reference Waveform” on page 28 for timing measurements and maximum
allowable input slew rate.
See Figure 7, “AC Waveform: Flash Program and Erase Operations” on page 33.
5.7
Flash Erase and Program Timings(1)
Table 15. Flash Erase and Program Timings (Sheet 1 of 2)
F-V
1.65 V– 3.3 V
11.4 V– 12.6 V
PP
Symbol
Parameter
Unit
Note
Typ(1)
Max
Typ(1)
Max
t
t
4-KW Parameter Block Program Time (Word)
32-KW Main Block Program Time (Word)
0.25 µm Word Program Time
2, 3
2, 3
2, 3
2, 3
2, 3
0.10
0.8
22
0.30
2.4
200
200
4
0.03
0.24
8
0.12
1
s
s
BWPB
BWMB
185
185
4
t
t
/ t
µs
s
WHQV1 EHQV1
0.13 µm and 0.18 µm Word Program Time
4-KW Parameter Block Erase Time (Word)
12
8
/ t
0.5
0.4
WHQV2 EHQV2
Datasheet
31
INTEL [ INTEL ]
