3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family
5.4
DC Characteristics
Table 11. DC Characteristics (Sheet 1 of 2)
2.7 V – 3.3 V
Symbol
Parameter
Device
Note
Unit
Test Conditions
Typ
Max
F-V /S-V = V Max
Flash/
SRAM
CC
CC
CC
I
I
Input Load Current
1
± 2
µA
µA
LI
V
= V Max or GND
CC
IN
F-V /S-V = V Max
Flash/
SRAM
CC
CC
CC
Output Leakage Current
1
1
0.2
10
± 10
LO
V
= V Max or GND
CC
IN
0.25µm
Flash
25
F-V = V Max
CC
CC
F-CE# = F-RP# = V
CC
0.13µm
and
0.18µm
Flash
µA
F-WP# = V or GND
CC
1
7
15
V
= V Max or GND
IN
CC
I
V
Standby Current
CC
CCS
2-Mb
SRAM
S-V = V Max
CC CC
1
1
1
1
-
-
10
15
25
25
µA
µA
µA
S-CS1# = V , S-CS2 = V
CC
CC
or S-CS2 = GND
4-Mb
SRAM
V
= V Max or GND
IN CC
8-Mb
SRAM
-
0.25µm
Flash
7
F-V = V Max
CC
CC
0.13µm
and
0.18µm
Flash
I
I
V
Deep Power-Down Current
µA
V
= V Max or GND
CCD
CC
IN CC
1
7
15
F-RP# = GND ± 0.2 V
2-Mb
SRAM
1
1
-
-
7
mA
mA
mA
mA
mA
mA
mA
I
= 0 mA, S-CS1# = V
IL
IO
Operating Power Supply Current
(cycle time = 1 µs)
S-CS2 = S-WE# = V
CC
IH
4-Mb
SRAM
V
= V or V
10
10
40
45
50
18
IN
IL IH
8-Mb
SRAM
1
-
2-Mb
SRAM
1
-
Cycle time = Min, 100% duty,
= 0 mA, S-CS1# = V ,
Operating Power Supply Current
(min cycle time)
I
I
IO
CC2
IL
4-Mb
SRAM
S-CS2 = V
V
= V or V
IH, IN IL IH
1
-
8-Mb
SRAM
1
-
0.25µm
Flash
1,2
10
F-V = V Max
CC
CC
F-OE# = V , F-CE# = V
IH
IL
0.13µm
and
0.18µm
Flash
I
V
Read Current
CC
CCR
f = 5 MHz, I
= 0 mA
OUT
1,2
9
18
mA
V
= V or V
IL IH
IN
26
Datasheet
INTEL [ INTEL ]
