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RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
Any attempt to address Protection Program commands outside the defined protection register  
address space will result in a status register error (program error bit SR.4 will be set to 1).  
Attempting to program or to a previously locked protection register segment will result in a status  
register error (program error bit SR.4 and lock error bit SR.1 will be set to 1).  
3.8.3  
Locking the Protection Register  
The user-programmable segment of the protection register is lockable by programming Bit 1 of the  
PR-LOCK location to 0. Bit 0 of this location is programmed to 0 at the Intel factory to protect the  
unique device number. This bit is set using the Protection Program command to program FFFDh to  
the PR-LOCK location. After these bits have been programmed, no further changes can be made to  
the values stored in the protection register. A Protection Program command to locked words will  
result in a status register error (program error bit SR.4 and Lock Error bit SR.1 will be set to 1).  
The protection register lockout state is not reversible.  
Figure 3. Protection Register Memory Map  
88H  
4 Words  
User Programmed  
85H  
84H  
4 Words  
Factory Programmed  
81H  
80H  
PR-LOCK  
0645_05  
22  
Datasheet  
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