28F640L30, 28F128L30, 28F256L30
VCCQ
2.2 V – 3.3 V
Sym
Parameter
Unit
Test Conditions
Notes
Typ
Max
I
V
V
Read
2
15
µA
V
V
V
V
V
≤ V
= V
= V
= V
= V
PPR
PP
PP
PP
PP
PP
PP
CC
0.05 0.10
22
0.05 0.10
22
program in progress
program in progress
erase in progress
erase in progress
PPL,
PPH,
PPL,
PPH,
I
Program Current
Erase Current
mA
PPW
PP
8
1,3
I
V
mA
PPE
PP
8
NOTES:
1. All currents are RMS unless noted. Typical values at typical V , T = +25°C.
CC
C
2. I
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
CCS
3. Sampled, not 100% tested.
4. V read + program current is the sum of V read and V program currents.
CC
CC
CC
5. V read + erase current is the sum of V read and V erase currents.
CC
CC
CC
6. I
7. I
is specified with the device deselected. If device is read while in erase suspend, current is I
plus I
.
CCR
CCES
CCES
, I
measured over typical or max times specified in Section 12.3, “Program and Erase Characteristics” on
CCW CCE
page 64
11.4
DC Voltage Characteristics
VCCQ
2.2 V – 3.3 V
Sym
Parameter
Unit
Test Condition
Notes
Min
Max
V
Input Low Voltage
0
0.4
V
V
1
IL
V
CCQ
–0.4
V
Input High Voltage
Output Low Voltage
V
CCQ
IH
V
V
= V MIN
CC
CC
V
0.1
V
V
= V
MIN
OL
CCQ
CCQ
I
= 100 µA
OL
V
V
= V MIN
CC
CC
V
CCQ
V
Output High Voltage
= V
MIN
OH
CCQ
CCQ
–0.1
I
= –100 µA
OH
V
V
V
V
Lock-Out Voltage
Lock Voltage
0.4
V
V
V
2
PPLK
PP
V
1.0
0.9
LKO
CC
V
Lock Voltage
LKOQ
CCQ
NOTES:
1. V can undershoot to –0.4V and V can overshoot to V +0.4V for durations of 20 ns or less.
CCQ
IL
IH
2. V < V
inhibits erase and program operations. Do not use V
and V
outside their valid ranges.
PP
PPLK
PPL
PPH
54
Datasheet
INTEL [ INTEL ]
