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NZ48F4000L0ZBQ0 参数 Datasheet PDF下载

NZ48F4000L0ZBQ0图片预览
型号: NZ48F4000L0ZBQ0
PDF下载: 下载PDF文件 查看货源
内容描述: 1.8 ?伏?英特尔? StrataFlash㈢ ?无线存储器?与? 3.0伏? I / O ? ( L30 ) [1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)]
分类和应用: 存储无线
文件页数/大小: 100 页 / 1405 K
品牌: INTEL [ INTEL ]
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28F640L30, 28F128L30, 28F256L30  
10.0  
Power and Reset  
10.1  
Power-Up/Down Characteristics  
Power supply sequencing is not required if VCC, VCCQ, and VPP are connected together; If  
VCCQ and/or VPP are not connected to the VCC supply, then VCC should attain VCCMIN before  
applying VCCQ and VPP. Device inputs should not be driven before supply voltage equals VCCMIN  
.
Power supply transitions should only occur when RST# is low. This protects the device from  
accidental programming or erasure during power transitions.  
10.2  
Power Supply Decoupling  
Flash memory devices require careful power supply de-coupling. Three basic power supply current  
considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks  
produced when CE# and OE# are asserted and deasserted.  
When the device is accessed, many internal conditions change. Circuits within the device enable  
charge-pumps, and internal logic states change at high speed. All of these internal activities  
produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive  
and inductive loading. Two-line control and correct de-coupling capacitor selection suppress  
transient voltage peaks.  
Because Intel® Multi-Level Cell (MLC) flash memory devices draw their power from VCC, VPP,  
and VCCQ, each power connection should have a 0.1 µF ceramic capacitor connected to a  
corresponding ground connection (e.g.VCCQ to VSSQ). High-frequency, inherently low-  
inductance capacitors should be placed as close as possible to package leads.  
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor should be  
placed between power and ground close to the devices. The bulk capacitor is meant to overcome  
voltage droop caused by PCB trace inductance.  
10.3  
10.4  
Automatic Power Saving (APS)  
Automatic Power Saving (APS) provides low power operation during a read’s active state. ICCAPS  
is the average current measured over any 5 ms time interval, 5 µs after CE# is deasserted. During  
APS, average current is measured over the same time interval 5 µs after the following events  
happen: (1) there is no internal read, program or erase operations cease; (2) CE# is asserted; (3) the  
address lines are quiescent and at VSSQ or VCCQ. OE# may also be driven during APS.  
Reset Characteristics  
Asserting RST# during a system reset is important with automated program/erase devices because  
systems typically expect to read from flash memory when coming out of reset. If a CPU reset  
occurs without a flash memory reset, proper CPU initialization may not occur. This is because the  
flash memory may be providing status information, instead of array data as expected. Connect  
RST# to the same active-low reset signal used for CPU initialization.  
50  
Datasheet  
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