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F28F010-90 参数 Datasheet PDF下载

F28F010-90图片预览
型号: F28F010-90
PDF下载: 下载PDF文件 查看货源
内容描述: 1024K ( 128K ×8 )的CMOS FLASH MEMORY [1024K (128K x 8) CMOS FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 30 页 / 407 K
品牌: INTEL [ INTEL ]
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28F010  
Bus  
Operation  
Command  
Comments  
Standby  
Wait for V Ramp to V (1)  
PP PPH  
Initialize Pulse-Count  
e
40H  
Write  
Write  
Set-up  
Program  
Data  
Program  
Valid Address/Data  
Standby  
Write  
Duration of Program  
)
Operation (t  
WHWH1  
(2)  
e
Operation  
Program  
Verify  
Data  
C0H; Stops Program  
(3)  
Standby  
Read  
t
WHGL  
Read Byte to Verify  
Programming  
Standby  
Compare Data Output to Data  
Expected  
e
Data 00H, Resets the  
Register for Read Operations  
Write  
Read  
Standby  
Wait for V Ramp to V (1)  
PP PPL  
290207–5  
NOTES:  
1. See DC Characteristics for the value of V  
3. Refer to principles of operation.  
and  
PPH  
4. CAUTION: The algorithm MUST BE FOLLOWED  
to ensure proper and reliable operation of the de-  
vice.  
V
.
PPL  
2. Program Verify is only performed after byte program-  
ming. A final read/compare may be performed (option-  
al) after the register is written with the Read command.  
Figure 5. 28F010 Quick Pulse Programming Algorithm  
11  
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