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EPCS1SI8 参数 Datasheet PDF下载

EPCS1SI8图片预览
型号: EPCS1SI8
PDF下载: 下载PDF文件 查看货源
内容描述: [Configuration Memory, 1MX1, Serial, CMOS, PDSO8, PLASTIC, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 40 页 / 1107 K
品牌: INTEL [ INTEL ]
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Page 34  
Operating Conditions  
Table 20. DC Operating Conditions  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
High-level input voltage for EPCS1,  
EPCS4, and EPCS16 devices  
0.6 x VCC VCC + 0.4  
V
VIH  
High-level input voltage for EPCS64  
and EPCS128 devices  
0.6 x VCC VCC + 0.2  
V
VIL  
VOH  
VOL  
II  
Low-level input voltage  
High-level output voltage  
Low-level output voltage  
Input leakage current  
–0.5  
VCC – 0.2  
0.3 x VCC  
V
V
(3)  
IOH = –100 A  
IOL = 1.6 mA  
(3)  
0.4  
V
VI = VCC or GND  
VO = VCC or GND  
–10  
10  
A  
A  
IOZ  
Tri-state output off-state current  
–10  
10  
Table 21. ICC Supply Current  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VCC supply current (standby mode) for EPCS1,  
EPCS4, and EPCS16 devices  
50  
A  
ICC0  
VCC supply current (standby mode) for EPCS64  
and EPCS128 devices  
5
100  
15  
A  
mA  
mA  
VCC supply current (during active power mode) for  
EPCS1, EPCS4, and EPCS16 devices  
ICC1  
VCC supply current (during active power mode) for  
EPCS64 and EPCS128 devices  
5
20  
(4)  
Table 22. Capacitance  
Symbol  
Parameter  
Conditions  
Min  
Max  
6
Unit  
pF  
CIN  
Input pin capacitance  
VIN = 0 V  
COUT  
Output pin capacitance  
VOUT = 0 V  
8
pF  
Notes to Table 18 through Table 22:  
(1) For more information, refer to the Operating Requirements for Altera Devices Data Sheet.  
(2) Maximum VCC rise time is 100 ms.  
(3) The IOH parameter refers to the high-level TTL or CMOS output current and the IOL parameter refers to the low-level TTL or CMOS output  
current.  
(4) Capacitance is sample-tested only at TA = 25 × C and at a 20-MHz frequency.  
Serial Configuration (EPCS) Devices Datasheet  
April 2014 Altera Corporation  
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