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EPCS1SI8 参数 Datasheet PDF下载

EPCS1SI8图片预览
型号: EPCS1SI8
PDF下载: 下载PDF文件 查看货源
内容描述: [Configuration Memory, 1MX1, Serial, CMOS, PDSO8, PLASTIC, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 40 页 / 1107 K
品牌: INTEL [ INTEL ]
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Page 14  
EPCS Device Memory Access  
Table 7. Address Range for Sectors in EPCS128 Devices (Part 3 of 3)  
Address Range (Byte Addresses in HEX)  
Sector  
Start  
End  
5
4
3
2
1
0
H'140000  
H'100000  
H'0C0000  
H'080000  
H'040000  
H'000000  
H'17FFFF  
H'13FFFF  
H'0FFFFF  
H'0BFFFF  
H'07FFFF  
H'03FFFF  
Operation Codes  
This section describes the operations that you can use to access the memory in EPCS  
devices. Use the DATA ASDI, and nCSsignals to access the memory in EPCS  
,
DCLK,  
devices. When performing the operation, addresses and data are shifted in and out of  
the device serially, with MSB first.  
The device samples the AS data input on the first rising edge of the DCLKafter the  
active low chip select (nCS) input signal is driven low. Shift the operation code, with  
MSB first, into the EPCS device serially through the AS data input (ASDI) pin. Each  
operation code bit is latched into the EPCS device on the rising edge of the DCLK  
.
Different operations require a different sequence of inputs. While executing an  
operation, you must shift in the desired operation code, followed by the address bytes  
or data bytes, both address and data bytes, or none of them. The device must drive  
nCSpin high after the last bit of the operation sequence is shifted in. Table 8 lists the  
operation sequence for every operation supported by the EPCS devices.  
For read operations, the data read is shifted out on the DATApin. You can drive the nCS  
pin high after any bit of the data-out sequence is shifted out.  
For write and erase operations, drive the nCSpin high at a byte boundary that is in a  
multiple of eight clock pulses. Otherwise, the operation is rejected and not executed.  
All attempts to access the memory contents while a write or erase cycle is in progress  
are rejected, and the write or erase cycle will continue unaffected.  
Table 8. EPCS Devices Operation Codes  
DCLK fMAX  
(MHz)  
(1)  
Operation  
Write enable  
Operation Code  
Address Bytes  
Dummy Bytes  
Data Bytes  
0000 0110  
0000 0100  
0000 0101  
0000 0011  
1010 1011  
0000 1011  
0000 0001  
0000 0010  
1100 0111  
0
0
0
3
0
3
0
3
0
0
0
0
0
3
1
0
0
0
0
0
25  
25  
32  
20  
32  
40  
25  
25  
25  
Write disable  
Read status  
Read bytes  
Read silicon ID  
Fast read  
(2)  
1 to infinite  
1 to infinite  
1 to infinite  
1 to infinite  
1
(2)  
(2)  
(2)  
(4)  
Write status  
Write bytes  
Erase bulk  
(3)  
1 to 256  
0
Serial Configuration (EPCS) Devices Datasheet  
April 2014 Altera Corporation  
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