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EP3C16M164C8N 参数 Datasheet PDF下载

EP3C16M164C8N图片预览
型号: EP3C16M164C8N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 15408 CLBs, 15408-Cell, CMOS, PBGA164, LEAD FREE, MBGA-164]
分类和应用: 可编程逻辑
文件页数/大小: 34 页 / 836 K
品牌: INTEL [ INTEL CORPORATION ]
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Chapter 1: Cyclone III Device Datasheet
Electrical Characteristics
1–3
1
A DC signal is equivalent to 100% duty cycle. For example, a signal that overshoots to
4.2 V can only be at 4.2 V for 10.74% over the lifetime of the device; for device lifetime
of 10 years, this amounts to 10.74/10ths of a year.
Table 1–2. Cyclone III Devices Maximum Allowed Overshoot During Transitions over a 10-Year
Time Frame
Symbol
Parameter
Condition
V
I
= 3.95 V
V
I
= 4.0 V
V
I
= 4.05 V
V
I
= 4.10 V
V
I
= 4.15 V
V
I
= 4.20 V
V
i
AC Input
Voltage
V
I
= 4.25 V
V
I
= 4.30 V
V
I
= 4.35 V
V
I
= 4.40 V
V
I
= 4.45 V
V
I
= 4.50 V
V
I
= 4.60 V
V
I
= 4.70 V
Note to
(1)
shows the methodology to determine the overshoot duration. In the example in
overshoot
voltage is shown in red and is present on the input pin of the Cyclone III device at over 4.1 V but below 4.2 V. From
for an overshoot of 4.1 V, the percentage of high time for the overshoot can be as high as 31.97% over
a 10-year period. Percentage of high time is calculated as ([delta T]/T) × 100. This 10-year period assumes the
device is always turned on with 100% I/O toggle rate and 50% duty cycle signal. For lower I/O toggle rates and
situations in which the device is in an idle state, lifetimes are increased.
Overshoot Duration as % of High Time
100
95.67
55.24
31.97
18.52
10.74
6.23
3.62
2.1
1.22
0.71
0.41
0.14
0.047
Unit
%
%
%
%
%
%
%
%
%
%
%
%
%
%
shows the methodology to determine the overshoot duration.
Figure 1–1. Cyclone III Devices Overshoot Duration
4.2 V
4.1 V
3.3 V
ΔT
T
July 2012
Altera Corporation