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EP3C16M164C8N 参数 Datasheet PDF下载

EP3C16M164C8N图片预览
型号: EP3C16M164C8N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 15408 CLBs, 15408-Cell, CMOS, PBGA164, LEAD FREE, MBGA-164]
分类和应用: 可编程逻辑
文件页数/大小: 34 页 / 836 K
品牌: INTEL [ INTEL CORPORATION ]
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Chapter 1: Cyclone III Device Datasheet
Electrical Characteristics
1–9
Internal Weak Pull-Up and Weak Pull-Down Resistor
lists the weak pull-up and pull-down resistor values for Cyclone III
devices.
Table 1–10. Cyclone III Devices Internal Weak Pull-Up and Weak Pull-Down Resistor
Symbol
Parameter
Conditions
V
CCIO
= 3.3 V ± 5%
Value of I/O pin pull-up resistor before
and during configuration, as well as
user mode if the programmable
pull-up resistor option is enabled
V
CCIO
= 3.0 V ± 5%
V
CCIO
= 2.5 V ± 5%
V
CCIO
= 1.8 V ± 5%
V
CCIO
= 1.5 V ± 5%
V
CCIO
= 1.2 V ± 5%
V
CCIO
= 3.3 V ± 5%
R
_PD
Value of I/O pin pull-down resistor
before and during configuration
V
CCIO
= 3.0 V ± 5%
V
CCIO
= 2.5 V ± 5%
V
CCIO
= 1.8 V ± 5%
V
CCIO
= 1.5 V ± 5%
Notes to
(1) All I/O pins have an option to enable weak pull-up except configuration, test, and JTAG pin. Weak pull-down feature is only available for JTAG
TCK.
(2) Pin pull-up resistance values may be lower if an external source drives the pin higher than V
CCIO
.
(3) R
_PU
= (V
CCIO
– V
I
)/I
R_PU
Minimum condition: –40°C; V
CCIO
= V
CC
+ 5%, V
I
= V
CC
+ 5% – 50 mV;
Typical condition: 25°C; V
CCIO
= V
CC
, V
I
= 0 V;
Maximum condition: 125°C; V
CCIO
= V
CC
– 5%, V
I
= 0 V; in which V
I
refers to the input voltage at the I/O pin.
(4) R
_PD
= V
I
/I
R_PD
Minimum condition: –40°C; V
CCIO
= V
CC
+ 5%, V
I
= 50 mV;
Typical condition: 25°C; V
CCIO
= V
CC
, V
I
= V
CC
– 5%;
Maximum condition: 125°C; V
CCIO
= V
CC
– 5%, V
I
= V
CC
– 5%; in which V
I
refers to the input voltage at the I/O pin.
Min
7
7
8
10
13
19
6
6
6
7
8
Typ
25
28
35
57
82
143
19
22
25
35
50
Max
41
47
61
108
163
351
30
36
43
71
112
Unit
k
k
k
k
k
k
k
k
k
k
k
R
_PU
Hot Socketing
lists the hot-socketing specifications for Cyclone III devices.
Table 1–11. Cyclone III Devices Hot-Socketing Specifications
Symbol
I
IOPIN(DC)
I
IOPIN(AC)
Note to
(1) The I/O ramp rate is 10 ns or more. For ramp rates faster than 10 ns, |IIOPIN| = C
dv/dt, in which C is I/O pin capacitance and dv/dt is the slew rate.
Parameter
DC current per I/O pin
AC current per I/O pin
Maximum
300
A
8 mA
July 2012
Altera Corporation