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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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E
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
4.15 Erase and Program Timings—Extended Temperature  
TA = –40 °C to +85 °C  
5 V ± 10%  
3.3 ± 0.3 V 5 V ± 10%  
Max Typ Max Typ  
12 V ± 5%  
3.3 ± 0.3 V 5 V ± 10%  
Max Typ  
VPP  
VCC  
Parameter  
Typ  
0.84  
2.4  
1.7  
1.1  
10  
Max  
7
Unit  
s
Boot/Parameter Block Erase Time  
Main Block Erase Time  
7
0.8  
1.9  
1.4  
0.9  
10  
7
0.44  
1.3  
1.6  
0.8  
8
7
0.34  
1.1  
1.2  
0.6  
8
14  
14  
14  
14  
s
Main Block Program Time (Byte)  
Main Block Program Time (Word)  
Byte Program Time  
s
s
µs  
µs  
Word Program Time  
13  
13  
8
8
NOTES:  
1. All numbers are sampled, not 100% tested.  
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value  
independent of VCC and VPP. See Note 3 for typical conditions.  
3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range. Production programming using  
CC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.  
V
4. Contact your Intel representative for information regarding maximum byte/word program specifications.  
53  
SEE NEW DESIGN RECOMMENDATIONS  
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