欢迎访问ic37.com |
会员登录 免费注册
发布采购

E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
 浏览型号E28F200CVT80的Datasheet PDF文件第47页浏览型号E28F200CVT80的Datasheet PDF文件第48页浏览型号E28F200CVT80的Datasheet PDF文件第49页浏览型号E28F200CVT80的Datasheet PDF文件第50页浏览型号E28F200CVT80的Datasheet PDF文件第52页浏览型号E28F200CVT80的Datasheet PDF文件第53页浏览型号E28F200CVT80的Datasheet PDF文件第54页浏览型号E28F200CVT80的Datasheet PDF文件第55页  
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
NOTES:  
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC  
Characteristics during read mode.  
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally  
which includes verify and margining operations.  
3. Refer to command definition table for valid A . (Table 7)  
IN  
4. Refer to command definition table for valid D . (Table 7)  
IN  
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1)  
6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes  
successfully.  
7. Time tPHBR is required for successful locking of the boot block.  
8. Sampled, but not 100% tested.  
9. See Test Configuration (Figure 21), 3.6 V and 3.3 ± 0.3 V Standard Test component values.  
10. See Test Configuration (Figure 21), 5 V Standard Test component values.  
51  
SEE NEW DESIGN RECOMMENDATIONS  
 复制成功!